The latest news and information on semiconductor lithography, including optical, EUV, e-beam, nanoimprint, maskless and other lithography techniques; exposure tools; resists; and masks/templates.
Researchers Apply Self-Assembly to NIL Master for Bit-Patterned Media David Lammers, News Editor - 08/19/2008
Researchers working at Hitachi Global Storage Technologies and the University of Wisconsin have applied a self-assembly approach that would sharply reduce the time required to write NIL templates. The HDD industry is moving to bit-patterned media, and the self-assembly approach would sharply reduce the e-beam writing time for a 95 mm diameter template with terabit/in2 densities. More
Obducat Garners Nanoimprint Orders From LED Maker Luxtaltek Staff - 08/21/2008
Sweden's Obducat AB said it has received an order for two of its NIL systems from Luxtaltek Corp., a maker of LEDs and GaN wafers. Obducat CEO Patrik Lundström said the LED sector could generate $150M in NIL orders over the next five years.
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Sematech EUV Resist at 22 nm Half-Pitch Staff - 08/12/2008
Sematech said researchers working at its Resist Test Center have demonstrated a chemically amplified EUV resist capable of 22 nm half-pitch resolution. Though the linewidth roughness needs some improvement, the resist will support early adopters of EUV lithography in the memory IC arena, Sematech said.
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Sematech engineers advance EUV resist technology to 22-nm By Ann Steffora Mutschler, Senior Editor - 08/12/2008
In a critical step toward creating the infrastructure for extreme ultraviolet lithography in high volume manufacturing at the 22-nm half-pitch node, engineers from Sematech have worked closely with researchers from major resist suppliers to demonstrate chemically amplified EUV resist platforms that support 22-nm half-pitch resolution.
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Carl Zeiss SMT to Acquire Israeli Start-Up Pixer Technology Staff - 08/07/2008
Carl Zeiss SMT is acquiring Pixer Technology Ltd., a 30-person company that offers photomask yield enhancement systems. Pixer uses short-pulse lasers to insert pixels into the reticle substrate to improve the uniformity of CDs on the mask.
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Chrome Going the Way of the Dodo Bird? David Lammers, News Editor - 07/29/2008
Chrome will be replaced by molybdenum silicide (MoSi) on masks starting at the 32 nm logic generation, said Franklin Kalk, CTO at Toppan Photomasks Inc. MoSi produces better sidewall patterns and is easier to etch. Asked if chrome may become obsolete, Kalk said, “Chrome probably is on its last legs.”
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Double Patterning Battles Cost, Complexity Aaron Hand, Executive Editor, Electronic Media - 07/17/2008
This year’s Sokudo Lithography Breakfast Forum focused on the challenges of double patterning. To be sure, double patterning is not without its challenges, but it nonetheless is positioned as the most promising technology for 32 nm patterning, and likely 22 nm as well.
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Self-Aligned Double Patterning Coming David Lammers, News Editor - 07/17/2008
Applied Materials Inc. (Santa Clara, Calif.) announced several new tools at SEMICON West, and said that its self-aligned double patterning technology is gaining acceptance at key NAND flash manufacturers.
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Bob Akins is co-founder and CEO of Cymer, and discusses his recent appointment as chairman of SEMI’s International Board of Directors, and concerns about IP theft. He also looks ahead to the time when EUV lithography will come online.
Now Playing: Crucial Issues for Device Manufacturers Ludo Deferm, Executive VP, Business Development, IMEC discusses the crucial issues for device manufacturers today: double patterning lithography, high-k/metal gate integration, and how to make these advances cost-effective. More Videos >>
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Technical Articles
Competing Lithography Technologies Share Heartaches Aaron Hand, Executive Editor, Electronic Media, 05/21/2008
Rather than debate the pros and cons of the advanced lithography technologies that had been presented at Sematech’s Litho Forum, panelists last week focused on the difficult challenges that all of the technologies face, and how they can leverage learning from each. Preliminary results of the Litho Forum survey were presented that night, but full results will be webcast early next month....
Etch's Role in Novel Logic Device Patterning Thorsten Lill, Applied Materials, Santa Clara, Calif., www.appliedmaterials.com; Steffen Schulze, Mentor Graphics, Wilsonville, Ore., www.mentor.com, 04/01/2008 The delay in the introduction of extreme ultraviolet (EUV) lithography has forced technologists to seek alternative patterning techniques using existing lithography tools for 32 and 22 nm devices. Splitting the tight pattern pitches, for example, of a line array into two separate masks with twice the regular space is one promising solution....
Novel CD-SEM Overlay Method Improves Dual Trench Patterning CDU Ilan Englard, Rich Piech, Liraz Gershtein, Ram Peltinov, Ofer Adan, Applied Materials Inc., Santa Clara, Calif., 02/01/2008
Using a trench-within-a-trench overlay mark and automated process control strategy, the CD uniformity issue associated with dual trench patterning can be kept within a production-worthy range....